Atti/3° convegno nazionale di radioecologia, Bologna, 22-23 giugno 1983 = Atti 3ème convention nationale de radioécologie, 22-23 juin 1983, Bologne = Atti 3nd national convention of radioecology Bologne June 22-23, 1983Convegno nazionale di radioecologia. 3. 1983, 309 p.Conference Proceedings

Burocrazia e società. Uno studio dei quadri direttivi dell'amministrazione italiana.. (Bureaucratie et société. Etude sur le personnel d'encadrement de l'administration italienne)CAPPELLETTI, L.1968, 282 p.Book

Abstract book/Atherosclerosis and cardiovascular diseases: etiopathogenesis, epidemiology, clinical evaluation, prevention and therapy, 5th international meeting, Bologna, November 28-30, 1983; Aterosclerosi e malattie cardiovascolari: eziopatogenesi, epidemiologia clinica, prevenzione e terapia, 5° convegno internazionale = Athérosclérose et maladies cardiovasculaires: étiopathogénie, épidémiologie, clinique, prévention et traitement: 5ème congrès international; Bologne 28-30 Novembre 1983Atherosclerosis and cardiovascular diseases: etiopathogenesis, epidemiology, clinical evaluation, prevention and therapy. International meeting. 5. sd, 256 p.Conference Proceedings

WOLTE 3 European Workshop on Low Temperature ElectronicsBROGIATO, Luciana; CAMIN, Daniel V; PESSINA, G et al.Journal de physique. IV. 1998, Vol 8, Num 3, issn 1155-4339, 331 p.Conference Proceedings

Tenth symposium on reliable distributed systems, Pisa, September 30 - October 2, 1991Symposium on reliable distributed systems. 1991, isbn 0-8186-2260-1, VIII, 228 p, isbn 0-8186-2260-1Conference Proceedings

Cryogenic behavior of low-noise monolithic preamplifiers using a JFET as a front-end elementCITTERIO, M; MANFREDI, P. F.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.155-Pr3.159, issn 1155-4339Conference Paper

Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 KNIU, G; GOGINENI, U; CRESSLER, J. D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.103-Pr3.107, issn 1155-4339Conference Paper

Performance of a SQUID read-out system for superconducting tunnel junctionsMARTIN, D. D. E; PEACOCK, A.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.225-Pr3.228, issn 1155-4339Conference Paper

Perspectives of the cryo-electronics for the year 2000GUTIERREZ-D., E. A; CLAEYS, C; SIMOEN, E et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.315-Pr3.320, issn 1155-4339Conference Paper

Resonance of low-frequency collective plasma oscillations at phase-slip centersCHURILOV, G. E.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.301-Pr3.304, issn 1155-4339Conference Paper

Temperature dependence of hot-carrier effects in 0.2 μm N- and P-channel fully-depleted unibond MOSFETsRENN, S. H; RAYNAUD, C; BALESTRA, F et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.13-Pr3.16, issn 1155-4339Conference Paper

The temperature influence of substrate current in submicron N-channel MOSFETsCHEN, S.-H; CHEN, S.-L; CHUNG, S.-T et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.53-Pr3.56, issn 1155-4339Conference Paper

Band tails and their influence on the performance of bipolar SiGe devices at low temperaturesSOKOLIC, S; FERK, B; AMON, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.113-Pr3.116, issn 1155-4339Conference Paper

Cryogenic amplification system for ultra-low noise measurementsLOMBARDI, G; MACUCCI, M; GIANNETTI, R et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.185-Pr3.188, issn 1155-4339Conference Paper

Eddy-current nondestructive measurements with different HTS-SQUID spatial orientationsVALENTINO, M; PEPE, G; RUOSI, A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.249-Pr3.252, issn 1155-4339Conference Paper

Features of indirect-band-to-band tunneling in an insulated-gate lateral pn junction device on a SIMOX substrate with an ultrathin 10-nm-thick silicon layerOMURA, Y.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.63-Pr3.66, issn 1155-4339Conference Paper

HEMTs for low-power and low-frequency noise 4.2 K cryoelectronics : fabrication and characterizationJIN, Y.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.131-Pr3.134, issn 1155-4339Conference Paper

SiGe HBT simulation based on m_p^* (T, Na, X_GE) numerical model HEMSOKOLIC, S; FERK, B; AMON, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.117-Pr3.118, issn 1155-4339Conference Paper

Submillimeter wave detection with high temperature superconducting bolometersGAUGUE, A; CARISTAN, E; ROBBES, D et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.263-Pr3.266, issn 1155-4339Conference Paper

Superconducting-semiconducting electronics (SSE) for broadband SQUID applicationsUCHAIKIN, S.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.221-Pr3.224, issn 1155-4339Conference Paper

Advances in discrete GaAs JFETs and simple amplifiers for deep cryogenic readoutsCUNNINGHAM, T. J; FITZSIMMONS, M.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.127-Pr3.130, issn 1155-4339Conference Paper

High-temperature superconducting receiver coil for NMR skin imagingGINEFRI, J.-C; DARRASSE, L; CROZAT, P et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.245-Pr3.248, issn 1155-4339Conference Paper

I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperatureROLDAN, J. B; GAMIZ, F; LOPEZ-VILLANUEVA, J. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.21-Pr3.24, issn 1155-4339Conference Paper

Implications of dopant-dependent low-field mobility and band gap narrowing on the bipolar device performancePALANKOVSKI, V; KAIBLINGER-GRUJIN, G; SELBERHERR, S et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.91-Pr3.94, issn 1155-4339Conference Paper

Low temperature mobility improvement in high-mobility strained-Si/Si_1-xGe_x multilayer MOSFETsROLDAN, J. B; GAMIZ, F; LOPEZ-VILLANUEVA, J. A et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.57-Pr3.60, issn 1155-4339Conference Paper